GaN Systems Data Center Articles

Fifth Annual “氮化镓系统 (GaN Systems) Cup” China Power Supply Society Design Competition is Underway

OTTAWA, Ontario, Canada, May 28, 2019 – 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors, is sponsoring the distinguished China Power Supply Society (CPSS) design competition, now underway with a record-breaking 40 engineering teams entering the competition from leading universities throughout China. 氮化镓系统 (GaN Systems) recently participated in the kick-off ceremony at…

The New Hardware Innovations Designed To Drive Industry 4.0

This article was originally published on Forbes.com on May 16, 2019 by Jim Witham, 氮化镓系统 (GaN Systems) CEO. We are in the midst of the Fourth Industrial Revolution. The first assembly lines introduced 100 years ago and the computers added 50 years later seem almost primitive as intelligent cyber-physical systems take their place on factory…

Key Takeaways From Applied Power Electronics Conference & Exposition (APEC) 2019

As the premiere U.S. annual event in Applied Power Electronics, APEC focuses on the practical and applied aspects of the power electronics business. More than 5,500 professionals from around the world attended this year’s conference, featuring more than 300 exhibiting companies with 50 countries represented. Gallium Nitride, GaN, was at the center of many discussions…

氮化镓系统 (GaN Systems) Unveils Industry’s Highest Current GaN Power Transistors

The Introduction of 150 A and 80 A, 650 V GaN E-HEMT Transistors Meet Growing Electric Vehicle, Energy Storage, and Industrial Motor Demands   OTTAWA, Ontario, Canada, March 6, 2019 – 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors, today announced the industry’s highest current 650 V GaN E-HEMTs with the…

氮化镓系统 (GaN Systems) Commended by Frost & Sullivan for its GaN Power Transistors

氮化镓系统 (GaN Systems)’ 100V and 650V Products meet the demand and addressing the unsolved power system challenges    LONDON, U.K. — February 14, 2019 — Based on its recent analysis of the European gallium nitride (GaN) power semiconductors market, Frost & Sullivan recognises 氮化镓系统 (GaN Systems), Inc. with the 2019 European New Product Innovation Award…

The Power Systems Behind A Greener Economy: A Q&A With Jim Witham, CEO Of 氮化镓系统 (GaN Systems)

This article was originally published on Forbes.com on January 25, 2019 by Wal van Lierop, Forbes Contributor.    How do we reduce CO2 emissions quickly without throttling the global economy? Discussions about climate change inevitably return to this question. For a genuinely satisfying answer, I offer this conversation with Jim Witham, CEO of 氮化镓系统 (GaN Systems).…

氮化镓系统 (GaN Systems) CEO, Jim Witham, Appears on Bloomberg to Discuss Gallium Nitride Semiconductors

Jim Witham, 氮化镓系统 (GaN Systems)’ CEO, appeared on Bloomberg BNN’s Power Shift to discuss how using gallium nitride (GaN) can help increase the energy efficiency of electronic systems. Click here to view this video on Bloomberg BNN Power Shift’s website

氮化镓系统 (GaN Systems) Onboard in an Abundance of Innovative Products at CES 2019

See how GaN-based power systems are transforming wireless charging, electric and autonomous vehicles, and consumer products   OTTAWA, Ontario, Canada, December 17, 2018 – 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors, invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs from game-changing companies that…

Top 2019 Trends Impacting the World’s Escalating Demand for Data and Power

An Explosion In Data-Intensive Technologies Such As IoT, AI, Machine Learning, and Blockchain Will Mean Significant New Pressures To Meet Escalating Demand For More Power 点击查看简体中文版 OTTAWA, ONTARIO, December 12, 2018: For the past several decades, the topic of ‘power’ has been consistently viewed as a challenge focused primarily on incremental improvement in making devices…

Reduce Size and Increase Efficiency with GaN-based LLC Solution

This article was originally published in Bodo’s Power Systems November 2018 issue by Yajie Qiu, Senior Power Electronics Application Engineer. A small portion is available here and the rest can be read along with supporting graphics and charts in the PDF below. GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime…