OTTAWA, Ontario, December 11, 2017 – 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors, has announced that Delta, the worldwide leader in power systems, has joined BMW i Ventures in participation of a strategic investment in 氮化镓系统 (GaN Systems). 氮化镓系统 (GaN Systems) plans to use the funding to expand global sales and accelerate…
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OTTAWA, ONTARIO, December 6, 2017 – Power – creating more efficient uses is one of the most pressing challenges in the 21st century. We live in an increasingly data and energy driven world that is following a clear trajectory of increasing reliance on and proliferation of data centers, electric vehicles, renewable energy, powerful industrial motors,…
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GaN is seen as a new technology in a new package with new characteristics. While it may not be new to some, for those who are unfamiliar to GaN’s innovation, the clock’s ticking and their competitors are developing systems with GaN. For some people, the fear of the unknown is intimidating at best. These individuals…
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OTTAWA, ONTARIO, December 1, 2017 – Winners from the annual China Power Supply Association (CPSS) competition were honored at the organization’s annual meeting on November 22, 2017 by sponsor 氮化镓系统 (GaN Systems), the global leader of GaN (gallium nitride) power semiconductors, alongside CPSS, China Power Society Science Popularization Committee, and Nanjing University of Aeronautics and…
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In High-Efficiency And High-Reliability Applications Download Now > Wide-bandgap devices, such as silicon-carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) and gallium-nitride high electron mobility transistors (HEMTs), exhibit an excellent figure of merits compared to conventional silicon devices. This paper focuses on 650V/30~60A enhancement-mode GaN HEMTs provided by 氮化镓系统 (GaN Systems), analytically models its switching behaviors, summarizes the…
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The old way of creating power modules with gallium-nitride power devices was to just substitute GaN devices for silicon equivalents in the module chassis. The resulting modules just didn’t perform up to their potential. As explained by 氮化镓系统 (GaN Systems)’ Jim Witham in this short video interview conducted by WHWT Media’s Lee Teschler, new module…
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Download PDF Now > This webinar sponsored by RichardsonRFPD and hosted by IEEE GlobalSpec introduces 氮化镓系统 (GaN Systems)’ products and capabilities, and compares them to other GaN devices and silicon MOSFET devices. Examples in key applications are reviewed. Overview 氮化镓系统 (GaN Systems) introduced Enhancement Mode GaN Transistors to the world in 2014, unveiling both 100V and 650V…
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Market Needs and Technical Solutions Download Now > This presentation from AVL Engineering and Technology looks at the developing 48V mild hybrid market. The powertrains technological and regulatory drivers are reviewed as well as the challenges. This forward-looking analysis projects the market needs through 2020.