GaN Systems Press Releases Articles

Wireless Charger with 氮化镓系统 (GaN Systems) transistors

AirFuel Alliance adds 氮化镓系统 (GaN Systems)

Above image: 250 W wireless charging device from the Imperial College London runs with 氮化镓系统 (GaN Systems)’ GaN transistors at 6.78 and 13.56 MHz. 氮化镓系统 (GaN Systems)’ enables high voltage, high power wireless charging OTTAWA, Ontario, January 16, 2017 – 氮化镓系统 (GaN Systems), the industry-leading enabler of high voltage, high current, and high-frequency wireless charging,…

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氮化镓系统 (GaN Systems) Launches Comprehensive Evaluation Platform for GaN Transistors

Universal motherboard and four daughterboards help power design engineers to easily evaluate the GaN E-HEMT performance in any system design OTTAWA, Ontario, November 4, 2016 – 氮化镓系统 (GaN Systems) launches a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard…

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On Display at electronica 2016 – New Power Systems Exhibit Dramatic Performance Improvements Due to 氮化镓系统 (GaN Systems)’ Transistors

Commercial inverters, power modules, battery chargers and energy storage systems using GaN are mainstream in transportation, consumer, and industrial applications. OTTAWA, Ontario – November 2, 2016 – Power system companies continue adopting gallium nitride (GaN) transistors in place of silicon IGBTs and MOSFETs. By designing GaN into power systems and modules, customers have launched a…

John Roberts

氮化镓系统 (GaN Systems) Co-Founder and Industry Trailblazer John Roberts to Deliver WiPDA 2016 Keynote Address

Address to showcase GaN’s unique value in the Automotive market OTTAWA, Ontario, October 27, 2016 – 氮化镓系统 (GaN Systems) is pleased to announce that co-founder and Chief Technology Officer John Roberts will deliver the keynote address at the 4th IEEE Power Electronics Society Workshop on Wide Bandgap Power Devices and Applications (WiPDA). The presentation, entitled…

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24th China Power Supply Society Advanced Technical Training Workshop Features 氮化镓系统 (GaN Systems)’ Transistors

China Power Supply Society’s advanced workshop trains hundreds of power engineers to leverage the benefits of GaN transistors Shanghai, China – October 5, 2016 – Today, gallium nitride (GaN) transistors play an indispensable role in power systems by replacing power IGBTs and MOSFETs with devices that operate more efficiently, and reduce system size, weight and…

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e2v and 氮化镓系统 (GaN Systems) Global Alliance Extends the Power of GaN to Aerospace & Defense Industries

e2v is now the global provider of 氮化镓系统 (GaN Systems)’ power transistors for Aerospace and Defense (A&D) applications   OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride…

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氮化镓系统 (GaN Systems)’ Founders Girvan Patterson and John Roberts Retire

OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of 氮化镓系统 (GaN Systems), President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building 氮化镓系统…

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氮化镓系统 (GaN Systems) Wins Coveted 2015 Global Semiconductor Award

Global Semiconductor Alliance award honors 氮化镓系统 (GaN Systems) for its industry impact. OTTAWA, Ontario, December 14, 2015 – 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over…

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Pi Innovo and 氮化镓系统 (GaN Systems) Collaborate to Exploit the Advantages of Gallium Nitride Semiconductors

A collaboration between Pi Innovo’s electronics design and development expertise and the superior performance of 氮化镓系统 (GaN Systems)’ gallium nitride (GaN) semiconductors, offers automakers a pathway to the efficient and effective electrification of auxiliary systems for multi-voltage conventional, hybrid-electric, and pure electric vehicles. Multi award winning 氮化镓系统 (GaN Systems)’ compound semiconductor devices are cost competitive…

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GaN Systems宣布台积电的产量提高10倍

2015年12月1日,安大略省渥太华 – 氮化镓能源晶体管的领先制造商GaN Systems公司宣布,其代工厂台积电(TMSC)已将基于GaN System专有的IslandTechnology®的产品的批量生产的产能扩大了10倍,以应对来自全球激增的消费者和企业客户的需求。 GaN Systems拥有业界最广泛,最全面的GaN能源晶体管产品组合,其中100V和650V GaN FET均已大批量供货。 基于GaN Systems的Island技术并使用TSMC的GaN fab工艺的晶体管拥有业界最佳的性能和优异的表现,其可以轻松超越世界上最高性能的硅功率半导体,是最新的碳化硅器件和具有竞争力氮化镓产品。 台积电氮化镓工艺与GaN Systems专有的Island Technology设计通过GaNPX™封装而结合并得到了进一步增强,该封装表现出高电流处理能力,极低的电感和出色的热性能。 GaN Systems的能源开关晶体管继续保持氮化镓市场的领导地位,提供同类最佳的100V和650V器件,并推动了从更薄的电视到更大范围的电动汽车的产品创新。 台积电业务管理副总裁Sajiv Dalal表示:“我们很高兴确认,我们与GaN Systems的合作带来了氮化镓从概念到可靠性测试再到批量生产的保证。” GaN Systems总裁Girvan Patterson补充说:“ GaN已成为首选的功率半导体解决方案。 智能移动设备,超薄电视,游戏机,汽车系统和其他大批量产品已采用GaN晶体管作为支持电源技术进行了设计, 因此,相应设备的大量供应能力迫在眉睫。通过使用我们已获专利的Island Technology,我们已经设计并提供了可广泛采用的GaN电源解决方案,该解决方案大大超出了硅器件所展现的性能标准。 因此,经过三年的合作,我们很高兴正式宣布与台积电(TSMC)的合作,台积电是全球领先的第三方半导体制造公司,也是整个行业质量和服务的代名词。” GaN Systems自2008年开始了交付大量高度可靠的接近芯片级封装的GaN晶体管的征途。 该公司成立的使命是基于Island Technology开发低成本,高可靠性的GaN-on-Silicon产品,一种创建岛的方法,可减轻电迁移,减小芯片模具尺寸,并以高产量实现超高电流器件。 将Island Technology与台积电(TSMC)的硅上GaN制造技术结合,使GaN Systems能够在2014年中期向市场交付高可用,高性能,常关型晶体管。 这使能源存储,企业和消费者市场中的全球电力系统制造商能够设计,开发,测试并将更强大,更轻便,更小巧的新产品推向市场来获得竞争优势。为满足客户在2016年对高GaN产量不断增长的需求,台积电致力于量产的承诺十分及时。