This article was written by Sam Davis and first appeared in powerelectronics.com. Paralleling GaN transistors increases the power handling capability of a high-efficiency and high-power density converter. To be successful, parallel operation depends on the designer’s ability to deal with parasitic elements within the GaN devices as well as those associated with interfacing circuits. Characteristics…
氮化镓系统 (GaN Systems) releases industry’s first E-HEMT bridgeless-totem-pole Power Factor Correction reference design OTTAWA, Ontario, May 9, 2017 – Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses. An option to overcome this is to use silicon MOSFETs in place of the…
This article, authored by contributing editor Peter Delly-Detwiler, was originally published in Forbes.com. I recently had an opportunity to speak with Blake Richetta, Vice President of Sales for sonnen – the residential energy storage company that began focusing on U.S. markets in 2015. Richetta, who was briefly Tesla’s North American Powerwall sales manager, has an…
This article, based on an interview with 氮化镓系统 (GaN Systems)’ CEO, Jim Witham, was originally authored by Paul O’Shea and published in powerelectronicsnews.com. As author Jeremey Rifkin put it, we are in the midst of the 3rd industrial revolution. The first was the mechanization of the textile industry, followed by the age of mass production…
氮化镓系统 (GaN Systems) sponsors inverter design competition OTTAWA, Ontario, April 24, 2017 – Choosing GaN instead of legacy silicon transistors allows power systems designers to increase both system efficiency and power density while reducing system size, weight and cost. Nowhere is this trend more apparent than in the energy market where GaN transistors are replacing…
The G-Philos 700W GaN-based ESS is 30% smaller and consumes 25% less power than their silicon version. 10 W to 50 kW applications leverage GaN for increased efficiency and reduced overall size OTTAWA, Ontario, March 20, 2017 – The demand for more power in electronics continues to increase, while the space allowable for power continues…
Image: A 250 W wireless power transmitting device running at 6.78 and 13.56 MHz, enabled by 氮化镓系统 (GaN Systems)’ GaN transistors; Courtesy of the Imperial College London High-frequency resonant design enables applications missing the key ingredient of high power transfer OTTAWA, Ontario, March 17, 2017 – The demand for high power wireless transfer is surging…
氮化镓系统 (GaN Systems) to demonstrate wireless power transfer and a broad range of commercial power modules OTTAWA, Ontario, March 13, 2017 – At the 2017 Electronica Shanghai Exposition in Shanghai, China, visitors will see state-of-the-art gallium nitride (GaN) transistors in action. From March 14-16, in Booth #E4.4212, 氮化镓系统 (GaN Systems) will conduct live demonstrations of…
Image: 氮化镓系统 (GaN Systems)’ 99% efficient, 3 kW PFC reference design will be among the products, systems and demonstrations on display at APEC 2017. 氮化镓系统 (GaN Systems) to demonstrate wireless power transfer and a broad range of commercial power systems OTTAWA, Ontario, March 16, 2017 – At the upcoming 2017 Applied Power Electronics Conference and…
GaN transistor thermal RC models enhance the accuracy of power system SPICE simulations OTTAWA, Ontario, February 3, 2017 – 氮化镓系统 (GaN Systems) has experienced a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognized that GaN devices significantly improve power efficiency and power density. By using…
