GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage. Download App Note GN004 Design considerations of paralleled GaN HEMT.
China Power Supply Society’s advanced workshop trains hundreds of power engineers to leverage the benefits of GaN transistors Shanghai, China – October 5, 2016 – Today, gallium nitride (GaN) transistors play an indispensable role in power systems by replacing power IGBTs and MOSFETs with devices that operate more efficiently, and reduce system size, weight and…
e2v is now the global provider of 氮化镓系统 (GaN Systems)’ power transistors for Aerospace and Defense (A&D) applications OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride…
by CEO Joe Duigan and CTO Dr. Karl Rinne, Heyday Integrated Circuits GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying layout, reducing component count, and improving reliability. GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power…
https://cn.gansystems.com/wp-content/uploads/2016/08/video3.jpg
113
200
gaN-admin
https://cn.gansystems.com/wp-content/uploads/2024/03/infineon-formerly-gan-fc.png
gaN-admin2016-09-09 10:10:182018-02-07 22:27:23PSDcast – Tony Astley of 氮化镓系统 (GaN Systems) on the future of the GaN marketplace
This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits. Register to watch the webinar.
[Originally published in the Ottawa Business Journal] Kanata North’s pedigree, talent are driving semiconductor success Kanata North remains on the cutting edge when it comes to the next generation of semiconductor technologies. And why wouldn’t it be? That pedigree is rich and runs deep, all the way back to Bell Northern Research and the old…
[Original article published by Power Systems Design Magazine is available here on page 23.] Details of Virginia Tech’s design that won 3rd place in Google’s Little Box Challenge By Xianan Zhao, Lanhua Zhang and Rachael Born Virginia Tech Summary In response to Google’s Little Box Challenge (LBC), our Virginia Tech team, the Future Energy Electronics…
OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of 氮化镓系统 (GaN Systems), President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building 氮化镓系统…
Global Semiconductor Alliance award honors 氮化镓系统 (GaN Systems) for its industry impact. OTTAWA, Ontario, December 14, 2015 – 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over…
