Address to showcase GaN’s unique value in the Automotive market
OTTAWA, Ontario, October 27, 2016 – 氮化镓系统 (GaN Systems) is pleased to announce that co-founder and Chief Technology Officer John Roberts will deliver the keynote address at the 4th IEEE Power Electronics Society Workshop on Wide Bandgap Power Devices and Applications (WiPDA). The presentation, entitled GaN Power Transistors – Powering Up, will focus on the current state of high current GaN power transistors and will discuss how 氮化镓系统 (GaN Systems)’ 100 V and 650 V GaN transistors are uniquely positioned to meet Automotive power systems requirements. Mr. Roberts will present to an audience of device scientists, circuit designers, and application engineers.
Mr. Roberts has been a distinguished champion of gallium nitride technology for over a decade. Over that period, he has contributed significantly to the semiconductor industry by spearheading the research, development, manufacturing and large scale production of GaN devices that today are being designed into power systems across the consumer, datacenter, industrial, transportation and energy markets. Mr. Roberts will share his perspective on where power design engineers are using GaN transistors to solve today’s power management challenges. He will also present examples where GaN transistors have been used to make systems more efficient, smaller, lighter and less costly.
The annual three day workshop will commence on November 7th, 2016 at The Chancellor Hotel in Fayetteville, Arkansas. Further details about the event are available here.