Company to present poster sessions and display its latest products that highlight real world benefits and applications in power-driven industries
OTTAWA, Ontario, Canada, September 13, 2018 – 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors today announced its participation at the 10th annual IEEE Energy Conversion Congress and Exposition (ECCE) 2018, the world’s leading technical conference for energy conversion solutions. Visitors will be able to see and hear about the most up-to-date developments, solutions, and discussions in GaN power electronics from poster sessions that will be presented by experts at 氮化镓系统 (GaN Systems) to the array of products and customer and application demonstrations that will be shown at booth #312.
“We look forward to gathering with our peers at ECCE to gain insights and exchange the latest research and technologies in energy conversion solutions,” said Paul Wiener, Vice-President, Strategic Marketing for 氮化镓系统 (GaN Systems). “We are especially excited to show GaN advancements and how it has become an important building block in power systems for today’s devices and in the future.”
氮化镓系统 (GaN Systems) will be exhibiting the latest products and design tools that extend capabilities of its award-winning GaN power transistors, including the 100 V, 120 A, 5 mΩ GaN E-HEMT device, the highest current and power efficient 100 V GaN power transistor; 120 A, 650 V, 12 mΩ GaN E-HEMT, the world’s highest current rated GaN power transistor; and wireless power amplifiers (100 W and 300 W) that are revolutionizing the wireless charging market for high-power consumer, industrial, and transport applications. In addition, reference designs and evaluation kits that ease the design process will be shown.
The company will also provide a wide range of customer and application demonstrations focused on the focused on industrial, automotive, and renewable energy applications.
At the conference, 氮化镓系统 (GaN Systems) experts will be presenting two posters in the poster session that provide engineers best practices in taking advantage of GaN power transistors in designing improved and innovative power systems:
- “An Ultrafast Discrete Short-Circuit/Over-Current Protection Circuit for GaN HEMTs” Authors: Ruoyu Hou, Juncheng Lu and Di Chen
- “Paralleled GaN HEMTs Loss Distribution Analysis for High-power Applications”
Authors: Juncheng(Lu) Lu, Ruoyu Hou and Di Chen
For more information or to schedule a meeting at ECCE, please visit the 氮化镓系统 (GaN Systems) conference website or plan to visit at booth #312.
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About 氮化镓系统 (GaN Systems)
氮化镓系统 (GaN Systems) is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics.
As a market-leading innovator, 氮化镓系统 (GaN Systems) makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, 氮化镓系统 (GaN Systems) is enabling power conversion companies to revolutionize their industries and transform the world. For more information, please visit our website or on Facebook, Twitter and LinkedIn.