The GS66508T-EVBHB evaluation board (EVB) is designed to demonstrate the performance of 氮化镓系统 (GaN Systems)’ 650V GaN enhancement mode high electron mobility transistor (E-HEMT) devices. The EVB is a fully functional half bridge power stage consisting of two 650V GaN E-HEMTs (top side cooled GS66508T, 30A/55mΩ), gate drive power supply, half bridge gate drivers and…