“氮化镓系统 (GaN Systems) Cup” Competition Winners Honored at China Power Supply Society Awards Ceremony
OTTAWA, Ontario, November 5, 2019 – 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors, alongside the China Power Supply Society (CPSS), China Power Society Science Popularization Committee, and Tsinghua University, today announced the winners of the fifth annual “氮化镓系统 (GaN Systems) Cup” design competition at an awards ceremony at the China Power Supply Society Conference (CPSSC) on Nov. 3, 2019.
The annual contest challenges top engineering teams from China’s leading universities to design new or improved power electronics systems using GaN power transistors from design to build that meets specified requirements. This year’s challenge was to develop a high-efficiency, high power density AC/DC power supply for data center server power applications with 氮化镓系统 (GaN Systems)’ 650 V power transistors. The design had to meet several requirements: 400 W rated output power, 220 VAC input voltage range/48 DC output voltage, and achieve 94% efficiency at 50% load and greater than 3W/cm3 power density.
Forty teams participated in the first round of the competition, 30 teams moved on to the second round, and 12 participated in the final competition. Five engineering teams were awarded for their GaN-based inverter designs. Cash awards of 20,000-yuan, 10,000 yuan, and 5,000 yuan were given to the top, first, and second winning teams:
Top Winner:
- Zhejiang University
First:
- Huazhong University of Science and Technology
- North China University of Technology
Second:
- Nanjing University of Aeronautics and Astronautics
- Heilongjiang University of Science and Technology
Honorable mentions go to:
- Chongqing University of Technology
- Hangzhou University of Electronic Science and Technology
- Harbin Institute of Technology
- Kunming University of Science and Technology
- Shanghai Maritime University
- Tsinghua University
- Yanshan University
The top winning team from Zhejiang University designed a solution that had a 3.76W/cm3 power density with 93.8% efficiency. Designs were judged on meeting the design criteria, functionality during the test day, ingenuity, and quality of presentation.
“Congratulations to the winning teams and to all those that participated in the challenge,” said Paul Wiener, Vice-President, Strategic Marketing for 氮化镓系统 (GaN Systems). “The ‘氮化镓系统 (GaN Systems) Cup’ continues to provide engineering students practical experience leveraging the benefits of GaN to address today’s high efficiency, high power needs.”
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About 氮化镓系统 (GaN Systems)
氮化镓系统 (GaN Systems) is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics. As a market-leading innovator, 氮化镓系统 (GaN Systems) makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, 氮化镓系统 (GaN Systems) is enabling power conversion companies to revolutionize their industries and transform the world. For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn.
As covered in: CompoundSemiconductor.net