Students Take GaN From Design To Build At The China Power Supply Society Design Competition Sponsored by 氮化镓系统 (GaN Systems)

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Winners from the prestigious China Power Supply Association (CPSS) competition were honored at the organization’s annual meeting on November 7, 2018  by sponsor 氮化镓系统 (GaN Systems), the global leader of GaN (gallium nitride) power semiconductors, alongside CPSS, China Power Society Science Popularization Committee, and Nanjing University of Aeronautics and Astronautics. 

In support of worldwide innovation in the power electronics industry, 氮化镓系统 (GaN Systems) has sponsored the distinguished China Power Supply Society design competition for the past five years. Top engineering teams participate from leading universities throughout China. The ‘氮化镓系统 (GaN Systems) Cup’ continues to promote and build excitement in the advancement of power electronic systems leveraging the benefits of GaN transistors to address the applications needs of the most demanding industries, including data centers, renewable energy systems, automotive, and consumer electronics.

This year, thirty-one teams participated from 29 universities throughout China. The judging benchmarks were heavily weighted on meeting the design criteria and functionality during the test day. Other considerations were ingenuity and quality of presentation. Cash awards of 20,000-yuan, 10,000 yuan, and 5,000 yuan were given to the top three prize finishers.

Five power design engineering teams were awarded for their high efficiency, high-power density GaN-based inverter designs. Here are this year’s winners:

  • First Place: Huazhong University of Science and Technology (华中科技大学)
  • Second Place: Xi’an Jiaotong University (西安交通大学)
  • Third Place: Hangzhou Dianzi University (杭州电子科技大学)
  • Zhejiang University (浙江大学)
  • Nanjing University of Aeronautics and Astronautics (南京航空航天大学)

“Congratulations to the award-winning young engineers at this year’s 氮化镓系统 (GaN Systems) Cup,” said Jim Witham, CEO of 氮化镓系统 (GaN Systems). “We’re continually inspired by their innovative approaches and use of GaN transistors. Solutions developed from the award recipients demonstrate the advantages GaN transistors enable to make designs smaller and more efficient.”