氮化镓系统 (GaN Systems) Upcoming Webinar Illustrates the Insignificant Effects of Dynamic Rds(on) to overall System Losses
氮化镓系统 (GaN Systems) announces an upcoming webinar on Thursday, May 16th at 11:00 AM Eastern Daylight Time titled: The Effect of Dynamic On-State Resistance to System Losses in GaN-based Hard-Switching Applications.
GaN power transistors are the building blocks of change for the design of a new generation of smaller, lower cost, more efficient power systems – free from the limitations of yesterday’s silicon. Over the past several years, power engineers have demonstrated that systems designed with GaN power transistors exhibit high efficiency and power density due to GaN’s superior switching performance. One characteristic that continues to draw attention from academia and industry is dynamic RDS(on) performance of GaN devices.
In this one-time only webinar, the following topics will be discussed:
- The testing methods suggested to establish GaN’s reliability and effective.
- Quantitative analysis of RDS(on)
- Conduction loss equation is analyzed
- A system-level loss breakdown is conducted
- Conclusion: Dynamic RDS(on) is not a significant loss factor in power system design.
Speaking at the webinar is Dr. Ruoyu (Roy) Hou. Dr. Hou is a Power Electronics Application Engineer at 氮化镓系统 (GaN Systems). He received his M.S. degree from the Illinois Institute of Technology, Chicago, IL, USA and his Ph.D. degree from the McMaster University, Hamilton, ON, Canada, both in electrical engineering.
Formerly an electrical engineer with GE Transportation, Dr. Hou was a post-doctoral research fellow at McMaster Automotive Resource Centre (MARC), a Canada-based Excellence Research Center.
Dr. Hou was a recipient of the ECCE Best Paper Award in 2016 and a co-recipient of the Chrysler Innovation Award for the Automotive Partnership Canada (APC) project in 2014.
The moderator for the webinar is Jason Lomberg, North American editor for Power Systems Design.
To watch the 氮化镓系统 (GaN Systems) webinar, please click here.
