Power Electronics Industry To Demonstrate How GaN Has Transformed Their Products At APEC 2018
OTTAWA, Ontario, Canada, February 15, 2018 – 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors, today announced its comprehensive lineup for the Applied Power Electronics Conference & Exposition (APEC) conference in San Antonio, Texas being held March 4-8, 2018
The company will showcase breakthrough GaN power transistor power levels and form factors. 氮化镓系统 (GaN Systems) will also provide customer and application demonstrations showing how GaN is solving the power challenges of today’s most demanding industries, including consumer electronics, data centers, automotive, renewable energy, and industrial. Furthermore, 氮化镓系统 (GaN Systems)’ experts will be presenting at several sessions illustrating how previously unattainable system performance is now a reality in many power-reliant industries.
Solutions
At APEC, 氮化镓系统 (GaN Systems) will announce an expansion of the company’s award-winning GaN power transistors with new products focused on industrial, automotive, and renewable energy applications. For the consumer and data center applications, several integrated half-bridge with driver solutions will be highlighted. Additionally, 氮化镓系统 (GaN Systems) will demonstrate new design tools including several evaluation boards such as the newly launched Insulated Metal Substrate (IMS) Evaluation Platform, which provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications.
氮化镓系统 (GaN Systems)’ award-winning GaN power transistors are today’s building blocks of change for the design of a new generation of smaller, lower cost, and more efficient power systems free from the limitations of yesterday’s silicon-based solutions. Attendees can learn how its being done at several 氮化镓系统 (GaN Systems) sessions.
| Code | Location | Date | Time | Paper ID | Title | |
|---|---|---|---|---|---|---|
| T20 | Room 214D | Wed. March 7 | 14:00-17:30 | 1312 | Opportunities and Design Considerations of GaN HEMTs in ZVS applications | |
| T20 | Room 214D | Wed. March 7 | 14:00-17:30 | 1045 | Parasitic Capacitance Eqoss Loss Mechanism, Calculation, and Measurement in Hard-Switching for GaN HEMTs | |
| D01 | Hemisphere Ballroom C1 & C2 | Wed. March 8 | 11:20-14:00 | 1108 | A Mathematical Guideline for Designing an AC-DC LLC Converter with PFC | |
| D12 | Hemisphere Ballroom C1 & C2 | Wed. March 8 | 11:30-14:00 | 1315 | A Full Power Emulation Platform for Evaluating Power Semiconductors | |
| IS06 | Room 206 | Wed. March 7 | 08:30-10:10 | 1107 | System Level Considerations with GaN Power Switching |
氮化镓系统 (GaN Systems) helps companies solve the persistent and universal problems of energy wasted in power conversion and the size limitations placed on overall product design in today’s system power density requirements.
Please visit 氮化镓系统 (GaN Systems) at Booth #1041 to see these products, customer and application demonstrations, and for the opportunity to speak with Gan Systems’ executives and application experts.
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About 氮化镓系统 (GaN Systems)
氮化镓系统 (GaN Systems) is the global leader in GaN power semiconductors with the largest portfolio of transistors that uniquely address the needs of today’s most demanding industries including data center servers, renewable energy systems, automotive, industrial motors and consumer electronics.
As a market-leading innovator, 氮化镓系统 (GaN Systems) makes possible the design of smaller, lower cost, more efficient power systems. The company’s award-winning products provide system design opportunities free from the limitations of yesterday’s silicon. By changing the rules of transistor performance, 氮化镓系统 (GaN Systems) is enabling power conversion companies to revolutionize their industries and transform the world. For more information, please visit: www.gansystems.com or on Facebook, Twitter and LinkedIn.
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Media Contact:
Mary Placido
Trier and Company for 氮化镓系统 (GaN Systems)
