This article was originally published in EDN Magazine. by Di Chen, Applications Engineering Manager, 氮化镓系统 (GaN Systems) Jason Xu, Applications Engineer, 氮化镓系统 (GaN Systems) Background As the world’s demand for data increases seemingly out of control, a real problem occurs in the data communications systems that have to handle this traffic. Datacenters and base stations,…
Universal motherboard and four daughterboards help power design engineers to easily evaluate the GaN E-HEMT performance in any system design OTTAWA, Ontario, November 4, 2016 – 氮化镓系统 (GaN Systems) launches a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard…
Commercial inverters, power modules, battery chargers and energy storage systems using GaN are mainstream in transportation, consumer, and industrial applications. OTTAWA, Ontario – November 2, 2016 – Power system companies continue adopting gallium nitride (GaN) transistors in place of silicon IGBTs and MOSFETs. By designing GaN into power systems and modules, customers have launched a…
[UPDATE: This product has been selected an EDN Top 100 Product of 2016! The article originally appeared in EDN Tools & Learning as a Product Review.] The world already consumes too much energy. Globally, as the middle class grows, even more energy will be required. Government regulations and increasingly stringent emissions standards compound the need…
GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage. Download App Note GN004 Design considerations of paralleled GaN HEMT.
China Power Supply Society’s advanced workshop trains hundreds of power engineers to leverage the benefits of GaN transistors Shanghai, China – October 5, 2016 – Today, gallium nitride (GaN) transistors play an indispensable role in power systems by replacing power IGBTs and MOSFETs with devices that operate more efficiently, and reduce system size, weight and…
e2v is now the global provider of 氮化镓系统 (GaN Systems)’ power transistors for Aerospace and Defense (A&D) applications OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride…
by CEO Joe Duigan and CTO Dr. Karl Rinne, Heyday Integrated Circuits GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying layout, reducing component count, and improving reliability. GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power…
https://cn.gansystems.com/wp-content/uploads/2016/08/video3.jpg
113
200
gaN-admin
https://cn.gansystems.com/wp-content/uploads/2024/03/infineon-formerly-gan-fc.png
gaN-admin2016-09-09 10:10:182018-02-07 22:27:23PSDcast – Tony Astley of 氮化镓系统 (GaN Systems) on the future of the GaN marketplace
This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits. Register to watch the webinar.
