This article was written by Sam Davis and first appeared in powerelectronics.com. Paralleling GaN transistors increases the power handling capability of a high-efficiency and high-power density converter. To be successful, parallel operation depends on the designer’s ability to deal with parasitic elements within the GaN devices as well as those associated with interfacing circuits. Characteristics…
This article, authored by contributing editor Peter Delly-Detwiler, was originally published in Forbes.com. I recently had an opportunity to speak with Blake Richetta, Vice President of Sales for sonnen – the residential energy storage company that began focusing on U.S. markets in 2015. Richetta, who was briefly Tesla’s North American Powerwall sales manager, has an…
This article, based on an interview with 氮化镓系统 (GaN Systems)’ CEO, Jim Witham, was originally authored by Paul O’Shea and published in powerelectronicsnews.com. As author Jeremey Rifkin put it, we are in the midst of the 3rd industrial revolution. The first was the mechanization of the textile industry, followed by the age of mass production…
氮化镓系统 (GaN Systems) sponsors inverter design competition OTTAWA, Ontario, April 24, 2017 – Choosing GaN instead of legacy silicon transistors allows power systems designers to increase both system efficiency and power density while reducing system size, weight and cost. Nowhere is this trend more apparent than in the energy market where GaN transistors are replacing…
The G-Philos 700W GaN-based ESS is 30% smaller and consumes 25% less power than their silicon version. 10 W to 50 kW applications leverage GaN for increased efficiency and reduced overall size OTTAWA, Ontario, March 20, 2017 – The demand for more power in electronics continues to increase, while the space allowable for power continues…
氮化镓系统 (GaN Systems) to demonstrate wireless power transfer and a broad range of commercial power modules OTTAWA, Ontario, March 13, 2017 – At the 2017 Electronica Shanghai Exposition in Shanghai, China, visitors will see state-of-the-art gallium nitride (GaN) transistors in action. From March 14-16, in Booth #E4.4212, 氮化镓系统 (GaN Systems) will conduct live demonstrations of…
Image: 氮化镓系统 (GaN Systems)’ 99% efficient, 3 kW PFC reference design will be among the products, systems and demonstrations on display at APEC 2017. 氮化镓系统 (GaN Systems) to demonstrate wireless power transfer and a broad range of commercial power systems OTTAWA, Ontario, March 16, 2017 – At the upcoming 2017 Applied Power Electronics Conference and…
GaN transistor thermal RC models enhance the accuracy of power system SPICE simulations OTTAWA, Ontario, February 3, 2017 – 氮化镓系统 (GaN Systems) has experienced a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognized that GaN devices significantly improve power efficiency and power density. By using…
以下这篇文章由Achim Scharf撰写并出版于2016年11月期的 Power Electronics Europe上. 根据市场研究员Yole, 2015-2016是氮化镓能源交易的活跃年，经过多次的波动，如今600伏特的氮化镓在市场上已经商业流通。氮化镓搭载IC首次亮相为氮化镓制造企业打开新的市场前景。氮化镓能源交易预计在2021年达到2.8亿美元，并且2015年到2021年，年均复合增长率（CAGR）达到86%。当前市场正受到新兴应用的推动，包括为数据库和电信提供能源补给，AC快充，汽车光学雷达，封包追踪，无线能源。 “在数字领域摩尔定律已经被打破，每18个月在芯片上晶体管的数量成倍增加，但是在电力能源领域氮化镓的研究才刚刚开始” EPC首席执行官Alex Lidow指出，“氮化镓是硅在能量转化和模拟设备，也有可能是数字组件上的逻辑技术传承。我们距离理论上氮化镓极限的800倍，这项技术能够整合达到NMOS的水平。” “在过去的几年中，已经出现了大量的强大的发展和关键的合作，这是一个充满希望和高速发展的行业。” Yole (www.yole.fr). 的技术与市场分析师Hong Lin评论道。值得一提的是集成设备技术 (www.IDT.com)，高效电源转换 (www.EPC-co.com)，Infineon科技 (www.Infineon.com) 和松下 (https://eu.industrial.panasonic.com/), Exagan (www.exagan.com) 和德国Xfab (www.xfab.com), 台湾积体电路制造公司 (www.tsmc.com) 和 GaN Systems (www.gansystems.com). 台积电是最早同时提供6英寸大小微型芯片中100伏和650伏的氮化镓的制造服务公司。将氮化镓从能源半导体市场带入到更大的IC市场的想法引起了其他几家公司的兴趣。例如EPC和GaN Systems都在研究更集成的解决方案。同时Texas Instruments （www.ti.com）在2015年宣布了80V能量级和2016年宣布了600V能量级。到2016年末快速的发展让用户不仅能从EPC购买低电压氮化镓（<200V），也可以从其他公司购买高电压（600V/650V）组件，包括Transphorm（www.transphormusa.com），GaN Systems和Infineon / Panasonic。Visic（www.visic-tech.com）于2016年9月宣布了1200 V电源模块。VisIC Technologies, Ltd. 总部位于以色列Nes Ziona，于2020年由氮化镓技术专家们建立起来。氮化镓模块典型导通电阻低至0.04Ω。目标应用是作为交换器用于电机驱动器、三相能源补充和其他需要电流切换达到50A的应用。“这项技术支持减少的栅极电荷和电容，同时又不会失去低RDS（ON）的优势，可提供低至140J的超低最大开关能量。交换损耗比SIC MOSFET低三到五倍。在九月这家公司也推出了一款新的12A氮化镓交换器，这种交换器采用了更小、导通电阻为0.080Ω的底部冷却包装。 一家新公司Navitas Semiconductor（www.navitassemi.com）于2016年3月在APEC上及随后在欧洲举行的PCIM 2016上发布了其基于Hughes Lab技术（www.hrl.com）的650 V GaN电源IC。“氮化镓已经做好了市场准备，我们正在整合以前未整合的东西。” 首席技术官Dan Kinzer表示。该公司设计了具备集成栅极驱动器的完全集成氮化镓IC，采用了5mm x 6mm QFN封装。“这种电子模式的设备特征是驱动损耗比硅要低20倍，驱动器的阻值也跟能量级匹配。同样，将近0的传感也导致了极低的转化损耗——我们的650V工艺允许损耗频率高达27和40MHz！转化不是极限而是磁性。”根据Kinzer所说的，这种设备用作500V同步整流器。 AllGaN™是第一个允许将650…
This article originally appeared in electroniknet.de in German. Below is a rough translation into English followed by the original German text. The new generation of power transistors, developed by 氮化镓系统 (GaN Systems), here the GS66508B model, is even more compact than AT&S’s ECP technology. AT&S’s Embedded Component Technology (ECP) creates the prerequisites for the realization…
