GaN Systems Data Center Articles

The Top 2018 Trends Impacting the World’s Power and Energy Footprint – Challenges Will Be Met by A Wave of Power Systems Designed to Be Lighter, Smaller, and More Efficient

OTTAWA, ONTARIO, December 6, 2017 – Power – creating more efficient uses is one of the most pressing challenges in the 21st century. We live in an increasingly data and energy driven world that is following a clear trajectory of increasing reliance on and proliferation of data centers, electric vehicles, renewable energy, powerful industrial motors,…

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“It Ain’t So Hard…” by Larry Spaziani

GaN is seen as a new technology in a new package with new characteristics. While it may not be new to some, for those who are unfamiliar to GaN’s innovation, the clock’s ticking and their competitors are developing systems with GaN. For some people, the fear of the unknown is intimidating at best. These individuals…

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Global Leaders Collaborate on GaN Technology

OTTAWA, Ontario – October 2, 2017 – The world is challenged with unsustainable increases in power consumption, combating climate change, implementing cleantech technologies and meeting green, CO2 reduction initiatives. Taiwanese electronics manufacturers work at the forefront of these efforts. To meet these challenges, 氮化镓系统 (GaN Systems), the world’s leading provider of gallium nitride (GaN) power…

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Gallium Nitride Sets Innovation Bars Higher

The following article, written by Mathew Dirjish, originally appeared in Sensors Online. Silicon has been the mainstay of semiconductor fabrication for as long as one can remember. It is the meat of transistors, OP amps, microprocessors, MCUs, PLCs, and numerous other devices. The material has proven more than viable and reliable and will be with…

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Ottawa tech firm 氮化镓系统 (GaN Systems) revved up about BMW investment

This article, written by David Sali, was originally published in the Aug. 25th issue of the Ottawa Business Journal. Kanata company’s next-generation semiconductor technology attracts multimillion-dollar injection of equity led by German automaker A Kanata firm that makes transistors that help electric and autonomous vehicles run more efficiently has landed millions in funding from one…

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Newly Enhanced LTSpice Model Simplifies Designing with GaN

Engineers gain a head-start and design accuracy OTTAWA, Ontario, August 15, 2017 – Power system design engineers want to be fast, accurate and confident with their simulated designs prior to building hardware. Achieving these goals with GaN designs has become easier with 氮化镓系统 (GaN Systems)’ new set of LTSpice models. Increasing efficiency and power density…

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BMW i Ventures Leads Strategic Investment in 氮化镓系统 (GaN Systems)

Mountain View – July 18, 2017 – 氮化镓系统 (GaN Systems), the world’s leading provider of GaN power transistors, announced the closing of an investment round led by BMW’s investment arm, BMW i Ventures. Consistent with its investment strategy, BMW i Ventures recognizes that 氮化镓系统 (GaN Systems)’ products maximize the efficiency of electronic systems while dramatically…

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A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article was originally published in the June 2017 issue of Bodo’s Power Systems. Research on wide bandgap (WBG) devices has been conducted for many years. The reason that the properties of Gallium Nitride (GaN) and Silicon Carbide (SiC) excite power engineers is because they show substantial performance improvements over their silicon-based counterparts. By Jason…

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Customer Products on Display at PCIM 2017

This video, originally published on Electronics Products Magazine’s YouTube channel, was recorded at PCIM 2017. 氮化镓系统 (GaN Systems)’ CEO, Jim Witham, talks with Alix Paultre about the adoption of GaN technology and describes some of the 30+ customer products displayed at PCIM that are performance-optimized by GaN transistors. Watch on YouTube >

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Paralleled GaN Transistors Boost Converter Power Up to 100kW

This article was written by Sam Davis and first appeared in powerelectronics.com. Paralleling GaN transistors increases the power handling capability of a high-efficiency and high-power density converter. To be successful, parallel operation depends on the designer’s ability to deal with parasitic elements within the GaN devices as well as those associated with interfacing circuits. Characteristics…

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