GaN Systems Press Releases Articles

GAN SYSTEMS SHOWCASES THE POWER OF GAN AT IEEE ENERGY CONVERSION CONGRESS & EXPO (ECCE) 2018

Company to present poster sessions and display its latest products that highlight real world benefits and applications in power-driven industries   OTTAWA, Ontario, Canada, September 13, 2018 – 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors today announced its participation at the 10th annual IEEE Energy Conversion Congress and Exposition (ECCE) 2018, the…

PowerSphyr and 氮化镓系统 (GaN Systems) Lead the Wireless Charging Revolution

Delivering a “world without cords” will become a reality Danville, California and Ottawa, Ontario, Canada, August 15, 2018 – PowerSphyr, and an innovator in wireless charging, and 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors, today announced a strategic agreement to bring state-of-the-art GaN-based wireless power systems to market for high…

氮化镓系统 (GaN Systems) Launches Videos Series Exploring the ‘Mobility (R)Evolution’

OTTAWA, Ontario, Canada, July 26, 2018 – 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors today released ‘The Mobility (R)Evolution,’ a three-part online video series that explores the ways new technologies for electrification and autonomous driving are enabling the auto industry to evolve rapidly into a sustainable mobility ecosystem.   The first installment of the…

Wireless Power Market Advances with Introduction of 氮化镓系统 (GaN Systems)’ 100W and 300W Solutions

Nuremberg, Germany, PCIM Europe (Power Conversion and Intelligent Motion), June 5, 2018  – 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors, today unveiled two wireless power amplifiers that will revolutionize the wireless charging market for high-power consumer, industrial, and transport applications. These new solutions include the 100 W power amplifier with ranges from 70…

ROHM and 氮化镓系统 (GaN Systems) Join Forces for GaN Power Semiconductors

KYOTO, Japan and OTTAWA, Canada, June 5, 2018 –  ROHM, a leading supplier of power semiconductors, and 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors, today announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics. This strategic partnership leverages…

Power Engineers From China’s Leading Universities Compete for the 2018 “氮化镓系统 (GaN Systems) Cup”

OTTAWA, Ontario, Canada, May 4, 2018– In support of worldwide innovation in the power electronics industry, 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors, is once again sponsoring the distinguished China Power Supply Society (CPSS) design competition, which is currently underway with many top engineering teams participating from leading universities throughout…

Cutting the Power Cord

GaN is rising to the challenge of increasing global demand for wireless charging solutions for high power systems.  As you might have seen, 氮化镓系统 (GaN Systems) and NuCurrent recently announced a joint partnership highlighting the launch of NuCurrent’s 150-watt wireless power solution, which is designed for industrial and consumer applications, using our high power, high…

NuCurrent Partners with 氮化镓系统 (GaN Systems) to Expand Wireless Charging Product Offerings with 150-Watt Solution

CHICAGO (PRWEB) APRIL 12, 2018– NuCurrent, an industry leader in wireless power systems and technology development, announces the development of 150-watt wireless power solutions designed for industrial and consumer applications with high power needs. This development, in partnership with 氮化镓系统 (GaN Systems), the leader in GaN power transistors, builds upon NuCurrent’s achievements in wireless power…

氮化镓系统 (GaN Systems) First To Announce Testing Success Beyond 10X Of JEDEC Requirements

San Antonio, TX, Applied Power Electronics Conference & Exposition (APEC), March 6, 2018 – 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors, today announced it has surpassed 10,000 hours of qualification testing for its GaN E-HEMT devices. This is 10X the 1,000-hour requirement to meet JEDEC qualification. As the power electronics industry increases…

Record-Setting 100 V/120 A GaN Power Transistor Introduced by 氮化镓系统 (GaN Systems)

San Antonio, TX, Applied Power Electronics Conference & Exposition (APEC), March 5, 2018 – 氮化镓系统 (GaN Systems), the global leader in GaN power semiconductors, today unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating…