OTTAWA, Ontario, Canada, April 24, 2019 – 氮化镓系统 (GaN Systems), the global leader in GaN (gallium nitride) power semiconductors, today announced that its CEO Jim Witham will deliver a keynote at PCIM Europe, the leading international exhibition and conference for power electronics and its applications, in Nuremberg, Germany May 7-9, 2019. Witham’s presentation, “GaN and Industry 4.0 – A Small Change that is Revolutionizing the Industry,” will be taking place Thursday, May 9, 2019 at 8:45 a.m. at Room Brüssel 1. He will also be hosting a Q&A session following the keynote from 12:20-12:50 p.m. at Room Mailand.
Witham will share a unique perspective on Industry 4.0 and how power electronics is playing a big role in breaking down the many technology challenges affecting this sector, especially the hardware innovation that needs to happen in the hundreds of millions of motors, motor drives, robots, and robotics needed in today’s industrial spaces.
Industrial use accounts for more than 40% of the world’s electricity use with two-thirds of that alone used by industrial motors. In the midst of the fourth Industrial Revolution new technology and energy requirements necessitate innovation in motor drives and robotics and in the data centers that support smart factories and facilities. GaN is advancing this revolution by enabling smaller, higher efficiency motors and motor drives as well as smaller and higher precision robotics. Robots, as they move to the new levels of autonomy and precision needed to support industry 4.0, will greatly benefit in advancements in motors and wireless charging.
In addition, several 氮化镓系统 (GaN Systems)’ experts will be participating in the following speaker sessions:
|May 7, 2019
|Hall 7, Booth 543||Jim Witham, 氮化镓系统 (GaN Systems)+ others||INDUSTRY FORUM: Getting Going with GaN – The session will look at the benefits that can be achieved by using GaN and the best practices for designing products with GaN. Directly after the presentation. Meet Jim at Hall 7, Booth 546|
|May 8, 2019
|Hall 7, Booth 543||Jim Witham||BODO PODIUM DISCUSSION ON WIDE BAND GAP DEVICES: GaN – Devices are Mature|
|May 8, 2019
|Foyer Ground Floor Entrance NCC Mitte||Tiefeng Shi||POSTER SESSION: Low cost 50W Class EF2 PA for Magnetic Resonance Wireless Power Transfer Applications|
|May 9, 2019
|Room Mailand||Lucas Lu||ORAL SESSION: Parasitics Optimization for GaN HEMTs in Conventional Housing-type Power Modules|
|May 9, 2019
|Room Brüssel 1||Roy Hou||ORAL SESSION: The Effect of Dynamic On-state Resistance to System Losses in GaN-based Hard-Switching Applications|