氮化镓系统 (GaN Systems) Commended by Frost & Sullivan for its GaN Power Transistors
氮化镓系统 (GaN Systems)’ 100V and 650V Products meet the demand and addressing the unsolved power system challenges
LONDON, U.K. — February 14, 2019 — Based on its recent analysis of the European gallium nitride (GaN) power semiconductors market, Frost & Sullivan recognises 氮化镓系统 (GaN Systems), Inc. with the 2019 European New Product Innovation Award for developing advanced GaN power semiconductor solutions for the data center, industrial, automotive, renewable energy, and consumer application sectors. The products’ unmatched efficiency, quality, and reliability enable customers to boost the productivity of their current assets and create new classes of products and systems.
“氮化镓系统 (GaN Systems)’ superior 100V and 650V power transistors outperform other silicon and GaN transistors by reducing the power loss, size, and weight by two to three times, which translates into lower overall system costs,” said Aravindhan Pillai Frost & Sullivan Research Analyst. “Because the transistors’ proprietary design and packaging are optimised for high frequency and high yield, they can potentially revolutionise the entire client ecosystem across different economy segments. For instance, they can reduce the power consumed in data centers, help renewable energy systems store and convert more power, and increase the mileage range of electric vehicles by boosting the efficiency of the power train.”
氮化镓系统 (GaN Systems)’ company strengths are reinforced by its strategic relations with major partners, such as TSMC, Delta, and BMW. Additionally, in June 2018, 氮化镓系统 (GaN Systems) signed a collaboration agreement with ROHM, a leading supplier of power semiconductors. The key goal of the partnership is to contribute to power electronics’ continuing evolution by developing form-, fit-, and function-compatible products using GaN semiconductor dies in both 氮化镓系统 (GaN Systems)’ GaNPX® packaging and ROHM’s traditional power semiconductor packaging. This partnership will offer customers the widest selection of dual-sourced GaN devices.
Furthermore, the company’s evaluation kits, application notes and circuit simulation tools allow customers to design their products with an ease-of-use that provides a shorter time-to-market system release. Specifically, the simulation tools allow design engineers to compare application conditions by implementing specific operation values. Customers can choose different load and source parameters, the number of devices to parallel, and heat sink parameters. In addition, these tools can generate data tables, with values for loss and junction temperature, enabling the comparison of the impact of parameter variations or the operation of different parts directly.
“氮化镓系统 (GaN Systems), headquartered in Canada with operations based in Taiwan; has a sales and applications engineering presence in Germany, Japan, China, Korea, and the United States; and aims to expand to Southern and Northern Europe in the future,” noted Aravindhan Pillai “The company’s wide portfolio and customer-centric products and services have positioned it ideally for both geographic expansion and rapid market share growth.”
Each year, Frost & Sullivan presents this award to the company that has developed an innovative element in a product by leveraging leading-edge technologies. The award recognises the value-added features/benefits of the product and the increased return on investment (ROI) it gives to customers, which, in turn, raises customer acquisition and overall market penetration potential.
Frost & Sullivan Best Practices Awards recognise companies in a variety of regional and global markets for demonstrating outstanding achievement and superior performance in areas such as leadership, technological innovation, customer service, and strategic product development. Industry analysts compare market participants and measure performance through in-depth interviews, analyses, and extensive secondary research to identify best practices in the industry.
