氮化镓系统 (GaN Systems) releases new Application Note highlighting paralleling GaN devices to reach 650V, 240A

GaN transistors exhibit exceptional paralleling capabilities. App Note GN004 is a practical guide to paralleling and layout considerations when designing in high speed GaN HEMT devices. The Note also provides a design example of a 4x paralleled GaN E-HEMT half bridge power stage.

Download App Note GN004 Design considerations of paralleled GaN HEMT.