Company expands sales and support to Israeli customers OTTAWA, Ontario, February 17, 2016 – 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride power transistors, announces it has entered into an agreement with Eastronics, the largest distributor of high technology products in Israel. With this agreement, 氮化镓系统 (GaN Systems) further extends its global product sales…
Unprecedented 2.6 kW/l, >97% efficient, ultra-compact, lighter EV charger made with GaN transistors OTTAWA, Ontario – Automotive electronics specialist HELLA, in collaboration with 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride power transistors, and charging technology researchers at Kettering University’s Advanced Power Electronics Lab, have developed a Level-2 electric vehicle (EV) charger prototype with…
Agreement aligns expansion efforts in gallium nitride adoption for power-conversion applications May, 2016 – Geneva, Ill.: Richardson RFPD, Inc. today announced an agreement with 氮化镓系统 (GaN Systems) Inc. Under the terms of the agreement, Richardson RFPD will sell 氮化镓系统 (GaN Systems)’ GaN on Si power devices on a global basis, excluding Israel. 氮化镓系统 (GaN Systems)…
氮化镓系统 (GaN Systems) teams with the UK EPSRC Power Electronics Centre to accelerate the use of high speed GaN transistors in future power conversion or control applications Nottingham, England – At a ceremony held at the EPSRC Centre for Power Electronics Annual Conference 2016 in Nottingham, England, a post-graduate team from Imperial College London received…
At APEC 2016 it became abundantly clear to the industry that GaN transistors are here, they’re now, and they’re proliferating. 氮化镓系统 (GaN Systems), EPC, Transphorm, Panasonic, Infineon, Texas Instruments, and other manufacturers and developers all displayed GaN products in varying readiness, from existing only on PowerPoint slides to actual customer production units. It’s been fascinating to…
EDN describes how GaN is outperforming silicon in power management applications. This article describes how GaN transistors enabled CE+T’s Red Electrical Devils team to design the tour de force inverter that won Google’s Little Box Challenge. Their inverter produced a power density of 143 W/cubic inch in 14 cubic inches, outperforming the Little Box Challenge…
Charging levels are headed higher, and greater efficiency could make it easier to top up tomorrow’s bigger batteries without straining the grid. Researchers at the Advanced Power Electronics Lab at Kettering University, in partnership with auto electronics giant HELLA, now report that they have built a Level 2 onboard charger with an efficiency of 97%,…
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.” While silicon carbide devices have been gaining a stronger beachhead in displacing IGBTs in higher voltage applications, the evolution of GaN as a cost-effective alternative to Si MOSFETs in applications from 200V up through 600V was, in…
