e2v is now the global provider of 氮化镓系统 (GaN Systems)’ power transistors for Aerospace and Defense (A&D) applications OTTAWA, Ontario and Milpitas, CA – September 27, 2016 – A master supply agreement between e2v, the global leader in the high reliability (hi-rel) semiconductor market, and 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride…
by CEO Joe Duigan and CTO Dr. Karl Rinne, Heyday Integrated Circuits GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying layout, reducing component count, and improving reliability. GaN (gallium nitride) E-HEMTs (High Electron Mobility Transistors) have altered the dynamics of power…
Download PDF Now > This webinar sponsored by RichardsonRFPD and hosted by IEEE GlobalSpec introduces 氮化镓系统 (GaN Systems)’ products and capabilities, and compares them to other GaN devices and silicon MOSFET devices. Examples in key applications are reviewed. Overview 氮化镓系统 (GaN Systems) introduced Enhancement Mode GaN Transistors to the world in 2014, unveiling both 100V and 650V…
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gaN-admin2016-09-09 10:10:182018-02-07 22:27:23PSDcast – Tony Astley of 氮化镓系统 (GaN Systems) on the future of the GaN marketplace
This webinar sponsored by Keysight Technologies and given by Dr. Ingmar Kallfass provides a new workflow for projects that include modeling and characterization of components and devices such as GaN transistors, electro-thermal co-simulation, and integration of GaN into power electronic circuits. Register to watch the webinar.
[Originally published in the Ottawa Business Journal] Kanata North’s pedigree, talent are driving semiconductor success Kanata North remains on the cutting edge when it comes to the next generation of semiconductor technologies. And why wouldn’t it be? That pedigree is rich and runs deep, all the way back to Bell Northern Research and the old…
[Original article published by Power Systems Design Magazine is available here on page 23.] Details of Virginia Tech’s design that won 3rd place in Google’s Little Box Challenge By Xianan Zhao, Lanhua Zhang and Rachael Born Virginia Tech Summary In response to Google’s Little Box Challenge (LBC), our Virginia Tech team, the Future Energy Electronics…
OTTAWA, Ontario, August 26, 2016 – Ten years after launching a gallium nitride (GaN) semiconductor company, and leading the company to #1 in the world of GaN power transistors, the two Ottawa-based co-founders of 氮化镓系统 (GaN Systems), President Girvan Patterson and CTO John Roberts have announced their retirement. Having achieved their goal of building 氮化镓系统…
Market Needs and Technical Solutions Download Now > This presentation from AVL Engineering and Technology looks at the developing 48V mild hybrid market. The powertrains technological and regulatory drivers are reviewed as well as the challenges. This forward-looking analysis projects the market needs through 2020.
Global Semiconductor Alliance award honors 氮化镓系统 (GaN Systems) for its industry impact. OTTAWA, Ontario, December 14, 2015 – 氮化镓系统 (GaN Systems), the leading manufacturer of gallium nitride power transistors, has won the coveted Global Semiconductor Alliance (GSA) 2015 “Start-Up to Watch” award. The award was announced and presented in front of an audience of over…
