The above photo was provided by 3NERGY. From 70 W to 70 kW, customers continue to make giant steps in size reduction OTTAWA, Ontario, May 10, 2017 – Everybody knows GaN can increase efficiency and reduce size. However, seeing is believing. By replacing legacy MOSFETs with gallium nitride (GaN) transistors, 氮化镓系统 (GaN Systems)’ customers improve…
氮化镓系统 (GaN Systems) releases industry’s first E-HEMT bridgeless-totem-pole Power Factor Correction reference design OTTAWA, Ontario, May 9, 2017 – Achieving efficiencies greater than 98% in conventional Power Factor Correction (PFC) circuits is challenging. The major hurdle is fixed diode bridge losses. An option to overcome this is to use silicon MOSFETs in place of the…
GaN transistors maximize FlexGrid inverter’s power efficiency while minimizing size and weight OTTAWA, Ontario, April 26, 2017 – 氮化镓系统 (GaN Systems)’ gallium nitride (GaN) transistors are being used by power inverter design engineers to increase power efficiency, and to reduce inverter size and weight. These performance advantages have compelled SolPad™, designer of state-of-the-art sustainable personalized…
氮化镓系统 (GaN Systems) sponsors inverter design competition OTTAWA, Ontario, April 24, 2017 – Choosing GaN instead of legacy silicon transistors allows power systems designers to increase both system efficiency and power density while reducing system size, weight and cost. Nowhere is this trend more apparent than in the energy market where GaN transistors are replacing…
Chrysalix Venture Capital Named 2017 Financial Investor of the Year Cycle Capital Management named Canada’s 2nd most active VC in 2016 OTTAWA, Ontario, April 17, 2017 – As 氮化镓系统 (GaN Systems)’ gallium nitride transistors revolutionize the power electronics market, the company’s funding partners are being recognized for their investment success. After releasing its 8th annual…
The G-Philos 700W GaN-based ESS is 30% smaller and consumes 25% less power than their silicon version. 10 W to 50 kW applications leverage GaN for increased efficiency and reduced overall size OTTAWA, Ontario, March 20, 2017 – The demand for more power in electronics continues to increase, while the space allowable for power continues…
Image: A 250 W wireless power transmitting device running at 6.78 and 13.56 MHz, enabled by 氮化镓系统 (GaN Systems)’ GaN transistors; Courtesy of the Imperial College London High-frequency resonant design enables applications missing the key ingredient of high power transfer OTTAWA, Ontario, March 17, 2017 – The demand for high power wireless transfer is surging…
氮化镓系统 (GaN Systems) to demonstrate wireless power transfer and a broad range of commercial power modules OTTAWA, Ontario, March 13, 2017 – At the 2017 Electronica Shanghai Exposition in Shanghai, China, visitors will see state-of-the-art gallium nitride (GaN) transistors in action. From March 14-16, in Booth #E4.4212, 氮化镓系统 (GaN Systems) will conduct live demonstrations of…
Image: 氮化镓系统 (GaN Systems)’ 99% efficient, 3 kW PFC reference design will be among the products, systems and demonstrations on display at APEC 2017. 氮化镓系统 (GaN Systems) to demonstrate wireless power transfer and a broad range of commercial power systems OTTAWA, Ontario, March 16, 2017 – At the upcoming 2017 Applied Power Electronics Conference and…
GaN transistor thermal RC models enhance the accuracy of power system SPICE simulations OTTAWA, Ontario, February 3, 2017 – 氮化镓系统 (GaN Systems) has experienced a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognized that GaN devices significantly improve power efficiency and power density. By using…
