氮化镓系统 (GaN Systems) Launches Comprehensive Evaluation Platform for GaN Transistors
Universal motherboard and four daughterboards help power design engineers to easily evaluate the GaN E-HEMT performance in any system design
OTTAWA, Ontario, November 4, 2016 – 氮化镓系统 (GaN Systems) launches a daughterboard style evaluation kit to help power design engineers easily evaluate the GaN E-HEMT performance in any system design, along with a universal motherboard (GS665MB-EVB). The family of four daughterboards ranging from 750 W to 2,500 W consists of two 氮化镓系统 (GaN Systems) 650 V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and an optional heatsink to form a high performance half bridge power stage.
Several notable features maximize the evaluation platform’s utility:
- The platform serves as a reference design and evaluation tool as well as a deployment-ready solution for easy in-system evaluation.
- The vertical mount style has a 35 mm height, which fits the majority of 1U design and allows evaluation of GaN E-HEMT in a traditional through-hole type power supply board.
- A current shunt position is provided for easy switching energy characterization testing.
- A universal form factor and footprint are used to allow customers to compare various power levels for optimal cost/performance decisions.
The family of 650 V evaluation boards consist of a universal motherboard as well as four 650 V E-HEMT daughterboards. The evaluation platform family of boards includes:
|
Evaluation Board Part Number |
GaN E-HEMT Part Number |
Description |
|
GS66504B-EVBDB |
GS66504B |
GaN E-HEMT 650 V/15 A, 100 mΩ |
|
GS66508B-EVBDB |
GS66508B |
GaN E-HEMT 650 V/30 A, 50 mΩ |
|
GS66508T-EVBDB |
GS66508T |
GaN E-HEMT 650 V/30 A, 50 mΩ, top side cooled |
|
GS66516T-EVBDB |
GS66516T |
GaN E-HEMT 650 V/60 A, |
|
GS665MB-EVB |
All |
Universal 650 V Motherboard |
氮化镓系统 (GaN Systems) is also launching the GS61008P-EVBBK, a highly efficient 48 V to 12 V synchronous buck converter based on the GS61008P 100 V, 90 A GaN E-HEMT. This system demonstrates very high efficiency at frequencies up to 2 MHz, commonly desired in 48 V systems. 氮化镓系统 (GaN Systems) VP Sales & Marketing, Larry Spaziani, stated, “By developing this family of GaN E-HEMT evaluation boards, we are providing power design engineers with the tools to easily evaluate and optimize GaN transistor performance in their systems. Our evaluation kits facilitate development of AC/DC, Energy storage, DC/DC and other power systems. The kits benefit developers across the consumer, datacenter, industrial, transportation, and energy markets.”
A carefully documented user guide can be downloaded directly here.
For pricing and availability, please contact our franchised distributor.
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