Richardson RFPD Announces Agreement with 氮化镓系统 (GaN Systems)

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Agreement aligns expansion efforts in gallium nitride adoption for power-conversion applications

May, 2016 – Geneva, Ill.: Richardson RFPD, Inc. today announced an agreement with 氮化镓系统 (GaN Systems) Inc. Under the terms of the agreement, Richardson RFPD will sell 氮化镓系统 (GaN Systems)’ GaN on Si power devices on a global basis, excluding Israel.

氮化镓系统 (GaN Systems) manufactures a range of gallium nitride high-power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power-conversion applications.

氮化镓系统 (GaN Systems) adds another innovative technology to our power-conversion linecard,” said Rafael R. Salmi, Ph.D., Richardson RFPD’s president. “氮化镓系统 (GaN Systems) brings GaN industry leadership to our portfolio, which already includes silicon carbide industry leaders. This ensures we can better support our customers that want to leverage the benefits of wide-bandgap semiconductors.”

“氮化镓系统 (GaN Systems)’ products have been adopted globally across consumer, industrial, datacenter and transportation markets,” said Larry Spaziani, 氮化镓系统 (GaN Systems) vice president of sales and marketing. “To respond to the increased demand for our products and to provide the highest level of service for customers and prospects, we are pleased to partner with Richardson RFPD, a leading global distributor with a strong energy and power focus and dedicated resources in the markets we serve.”